AON6403L
P-Channel Power Transistor
General Description
The AON6403L combines advanced trench MOSFET technology with a ...
AON6403L
P-Channel Power
Transistor
General Description
The AON6403L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -4.5V) -30V -85A < 3.1mΩ < 4.3mΩ
- RoHS Compliant - Halogen Free
100% UIS Tested 100% Rg Tested
D
Top View Fits SOIC8 footprint !
G S
DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation
B C C
Maximum -30 ±20 -85 -67 -280 -21 -17 -72 259 83 33 2.3 1.4 -55 to 150
Units V V A
TC=25°C TC=100°C TA=25°C TA=70°C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W °C
TC=100°C TA=25°C TA=70°C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 14 40 1
Max 17 55 1.5
Units °C/W °C/W °C/W
Rev 1: January 2009
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Free Datasheet http://www.datasheet4u.com/
AON6403L
Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=V...
