AON6408

AON6408 30V N-Channel MOSFET General Description The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is for PWM applications. Product Summary VDS (V) = 30V ID = 25A RDS(ON) < 6.5mΩ RDS(ON) < 9.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C C Maximum 30 ±20 25 20 130 14.5 11.5 32 51 31 12.5 2.4 1.5 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W ° C Repetitive avalanche energy L=0.1mH C TC=25° Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17 44 3.4 Max 21 53 4 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AON6408 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=125° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON)...