AON6444

AON6444 60V N-Channel MOSFET SDMOS TM General Description The AON6444 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 60V 81A < 6.5mΩ < 8mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° C Power Dissipation B C Maximum 60 ±20 81 51 170 14 11 58 168 83 33 2.3 1.4 -55 to 150 Units V V A VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W ° C C TC=100° TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev 1: November 2010 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AON6444 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Cond...