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AON6448 Dataheets PDF



Part Number AON6448
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AON6448 DatasheetAON6448 Datasheet (PDF)

AON6448 80V N-Channel MOSFET SDMOS TM General Description The AON6448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 80V 65A < 9.6mΩ < 12mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom V.

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AON6448 80V N-Channel MOSFET SDMOS TM General Description The AON6448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 80V 65A < 9.6mΩ < 12mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 80 ±25 65 41 138 11 9.0 50 125 83 33 2.5 1.6 -55 to 150 Units V V A VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 50 1.5 Units ° C/W ° C/W ° C/W Rev 3: April 2011 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AON6448 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=80V, VGS=0V TJ=55° C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=7V, ID=10A Forward Transconductance Diode Forward Voltage VDS=5V, ID=10A IS=1A,VGS=0V TJ=125° C 2.7 140 7.9 13.3 9.6 30 0.65 1 85 2100 VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz 240 70 0.4 35 VGS=10V, VDS=40V, ID=10A 11 8 VGS=10V, VDS=40V, RL=4Ω, RGEN=3Ω IF=10A, dI/dt=500A/µs 12 45 2600 340 120 0.8 44 14 14 18 10 24.5 5.2 17 65 22 85 3100 440 170 1.2 53 17 20 9.6 16 12 3.2 Min 80 10 50 100 3.7 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150° C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150° C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150° C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Ratings are based on low frequency and duty cycles to keep C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° initial TJ =25° C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, C. The SOA curve provides a single pulse ratin g. assuming a maximum junction temperature of TJ(MAX)=150° G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25° C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: April 2011 www.aosmd.com Page 2 of 7 Free Datasheet http://www.datasheet4u.com/ AON6448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 120 100 6.5V ID (A) ID(A) 80 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 11 10 RDS(ON) (mΩ ) 9 8 7 6 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 5 10 VGS=10V VGS=7V Normalized On-Resistance 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 VGS=7V ID=10A VGS=10V ID=10A VGS=5.5V 6V 80 60 40 20 0 0 2 4 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics (Not.


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