30V N-Channel MOSFET
AON6502
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(o...
Description
AON6502
30V N-Channel AlphaMOS
General Description
Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
30V 85A < 2.2mΩ < 2.7mΩ
Applications
DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial See Note I
100% UIS Tested 100% Rg Tested
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
VGS ID
IDM IDSM
IAS EAS
VDS Spike Power Dissipation B
100ns TC=25°C TC=100°C
VSPIKE PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 85 66 334 49 39 70 123 36 83 33 7.4 4.7
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 14 40 1.1
Max 17 55 1.5
D
S
Units V V A
A A mJ V W W °C
Units °C/W °C/W °C/W
Rev 1: September 2017
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AON6502
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
...
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