LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
2N3810DCSM
DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED...
LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
2N3810DCSM
DUAL HIGH GAIN
PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
FEATURES
HERMETIC CERAMIC SURFACE MOUNT PACKAGE CECC SCREENING OPTIONS
4.32 ± 0.13 (0.170 ± 0.005)
2.29 ± 0.20 (0.09 ± 0.008)
1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003)
1.40 ± 0.15 (0.055 ± 0.006)
2.54 ± 0.13 (0.10 ± 0.005)
2 1
3 4 5
SPACE QUALITY LEVELS OPTIONS
A
6
0.23 rad. (0.009) 1.27 ± 0.13 (0.05 ± 0.005)
6.22 ± 0.13 (0.245 ± 0.005)
A=
LCC2 PACKAGE
Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1
APPLICATIONS:
Suitable for use in high gain, low noise differential amplifier applications.
ABSOLUTE MAXIMUM RATINGS
VCBO VCEO VEBO IC PD TSTG
NOTES
1. Base – Emitter Diode Open Circuited.
(Tamb = 25°C unless otherwise stated) Collector – Base Voltage Collector – Emitter Voltage 1 Emitter – Base Voltage Collector Current Total Device Dissipation Derate above 25°C Storage Temperature Range
EACH SIDE
TOTAL DEVICE
–60V –60V –5V –50mA 500mW 600mW 2.9mW / °C 3.4mW / °C –65 to 200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/95
LAB
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
V(BR)CBO V(BR)EBO ICBO IEBO
SEME
2N3810DCSM
Test Conditions 1
IE = 0 IB = 0 IC = 0 IE = 0 TA = 150°C VEB = –4V IC = –10µA IC = –100µA IC = 0 VCE =...