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2N3810DCSM

Seme LAB

DUAL HIGH GAIN PNP TRANSISTORS

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3810DCSM DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED...


Seme LAB

2N3810DCSM

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LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3810DCSM DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES HERMETIC CERAMIC SURFACE MOUNT PACKAGE CECC SCREENING OPTIONS 4.32 ± 0.13 (0.170 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 1.40 ± 0.15 (0.055 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 3 4 5 SPACE QUALITY LEVELS OPTIONS A 6 0.23 rad. (0.009) 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) A= LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 APPLICATIONS: Suitable for use in high gain, low noise differential amplifier applications. ABSOLUTE MAXIMUM RATINGS VCBO VCEO VEBO IC PD TSTG NOTES 1. Base – Emitter Diode Open Circuited. (Tamb = 25°C unless otherwise stated) Collector – Base Voltage Collector – Emitter Voltage 1 Emitter – Base Voltage Collector Current Total Device Dissipation Derate above 25°C Storage Temperature Range EACH SIDE TOTAL DEVICE –60V –60V –5V –50mA 500mW 600mW 2.9mW / °C 3.4mW / °C –65 to 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/95 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter V(BR)CBO V(BR)EBO ICBO IEBO SEME 2N3810DCSM Test Conditions 1 IE = 0 IB = 0 IC = 0 IE = 0 TA = 150°C VEB = –4V IC = –10µA IC = –100µA IC = 0 VCE =...




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