Document
AON6564
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 32A < 5mΩ < 8.5mΩ
Application
• DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
DFN5X6 Top View Bottom View
1 2 3 4
Top View
D
8 7 6 5
G S
PIN1
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A 100ns TC=25° C TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
C
Maximum 30 ±20 32 25 128 29 23 36 32 36 25 10 6 3.8 -55 to 150
Units V V A
VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG
A A mJ V W W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 17 44 3.5
Max 21 53 5
Units ° C/W ° C/W ° C/W
Rev0: Dec, 2012
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Free Datasheet http://www.datasheet4u.com/
AON6564
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.6 2 4 5.4 6.7 83 0.7 1 30 1300 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.7 530 75 1.5 18.3 VGS=10V, VDS=15V, ID=20A 8.5 4.8 2.5 7.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 4.8 23.3 4.5 14 25 1550 700 130 2.3 33 17 Min 30 1 5 100 2.4 5 7 8.5 Typ Max Units V µA nA V mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given applicat.