AON6758
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Sch...
AON6758
30V N-Channel AlphaMOS
General Description
Latest Trench Power AlphaMOS (αMOS LV) technology Integrated
Schottky Diode (SRFET) Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 32A < 3.6mΩ < 5mΩ
Application
DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
DFN5X6 Top View Top View Bottom View
1 2 3 4 8 7 6 5
D
SRFETTM Soft Recovery MOSFET: Integrated
Schottky Diode G
PIN1
S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A
C
Maximum 30 ±20 32 25 128 27 21 50 63 36 41 16 4.1 2.6 -55 to 150
Units V V A
VGS TC=25° C TC=100° C TA=25° C C TA=70° ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C
A A mJ V W W ° C
Avalanche energy L=0.05mH C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 24 53 2.6
Max 30 64 3
Units ° C/W ° C/W ° C/W
Rev 1: April 2012
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