AON6782

AON6782 30V N-Channel MOSFET SRFET General Description SRFETTM AON6782 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. TM Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 2.4mΩ < 2.9mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View 8 7 6 5 D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B C Maximum 30 ±12 85 66 260 24 19 57 162 83 33 2.5 1.6 -55 to 150 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C TC=100°C TA=25°C TA=70°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 42 1.1 Max 20 50 1.5 Units °C/W °C/W °C/W Rev1 : Oct 2010 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AON6782 Electrical Characteristics (T J=25°C unless otherwise noted) Param...