30V Dual N-Channel MOSFET
AON6816
30V Dual N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low ...
Description
AON6816
30V Dual N-Channel AlphaMOS
General Description
Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge ESD protection RoHS and Halogen-Free Compliant
Application
DC/DC Converters
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
Typical ESD protection
100% UIS Tested 100% Rg Tested
30V 16A < 6.2mΩ < 9.6mΩ
HBM Class 2
DFN5X6 EP2
Top View
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
G1
D1
G2 S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°CG
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
ID
IDM IDSM
IAS EAS
VDS Spike
100ns
VSPIKE
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 16 16 64 16 14 35 31 36 21 8 2.8 1.8
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 35 65 5
Max 45 80 6
D2
S2
Units V V A
A A mJ V W W °C
Units °C/W °C/W °C/W
Rev1.0: December 2014
www.aosmd.com
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Vo...
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