AON6906A

AON6906A 30V Dual Asymmetric N-Channel MOSFET General Description The AON6906A is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization.It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 "High Side" MOSFET is desgined to minimze switching losses. The Q2 "Low Side" MOSFET is desgined for low R DS(ON) to reduce conduction losses.Power losses are minimized due to an extremely low combination of R DS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested Q1 30V 37A <14.4mΩ <21.3mΩ Q2 30V 48A <11.7mΩ <17.5mΩ DFN5X6 Top View Bottom View PIN1 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Continuous Drain Current Avalanche Current C Avalanche Energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case A Max Q2 30 ±20 48 30 100 10 8.1 23 26 45 18 2 1.3 -55 to 150 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG 37 23 85 9.1 7.2 21 22 31 12.5 1.9 1.2 Pulsed Drain Curre...