AON6918

AON6918 25V Dual Asymmetric N-Channel MOSFET General Description The AON6918 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses. The AON6918 is well suited for use in compact DC/DC converter applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested Q1 25V 60A <5.2mΩ <7.8mΩ Q2 25V 85A <1.8mΩ <2.7mΩ DFN5X6A Top View S2 S2 S2 Bottom View G2 (S1/D2) D1 D1 D1 D1 G1 PIN1 Top View Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current Avalanche Current C C Max Q1 25 ±20 60 38 200 15 12 40 80 31 12.5 2 1.3 -55 to 150 Max Q2 Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG TC=25° C 85 66 490 26.5 21 78 304 104 41.5 2.2 1.4 A A mJ W W ° C A Avalanche Energy L=0.1mH Power Dissipation B TC=100° C TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-Sta...