AON6922

AON6922 25V Dual Asymmetric N-Channel MOSFET General Description The AON6922 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses. The AON6922 is well suited for use in compact DC/DC converter applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested Q1 25V 71A <3.8mΩ <4.8mΩ Q2 25V 85A <1.4mΩ <1.8mΩ DFN5X6A Top View S2 S2 S2 Bottom View G2 (S1/D2) D1 D1 D1 G1 D1 Top View Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Max Q1 VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche Energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Max Q2 25 ±12 85 66 420 31 25 78 304 104 41.5 2.2 1.4 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG 71 44 240 18 14 40 80 31 12.5 2 1.3 A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA R...