AON6936

AON6936 30V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested Q1 30V 32A <4.9mΩ <8.4mΩ Q2 30V 44A <2mΩ <2.8mΩ Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial 100% Rg Tested DFN5X6B Top View Bottom View PIN1 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C Max Q2 30 ±20 44 34 176 40 32 50 63 36 83 33 4.3 2.7 -55 to 150 Units V V A VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25°C TC=100°C TA=25°C TA=70°C 32 25 128 22 18 32 26 36 31 12 3.6 2.3 A A mJ V W W °C Avalanche Energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ Q1 29 56 3.3 Typ Q2 24 50 1.2 Max Q1 Max Q2 35 29 67 60 4 1.5 Units °C/W °C/W °C/W Rev 0 : July 2012 www.aosmd.com Page 1 of 10 Free Datasheet http://www.da...