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AON6970
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested Q1 30V 58A <5.4mΩ <8.5mΩ Q2 30V 85A <1.5mΩ <2.3mΩ
Application
• DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial
100% Rg Tested
DFN5X6D Top View S2 S2 Bottom View G2 PHASE (S1/D2) D1 D1 PIN1 D1 D1 PIN1 G1
Top View
Bottom View
PHASE S1/D2
S2
D1
S1/D2
Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation
A C
Max Q2 30 ±20 85 66 340 42 33 65 106 36 78 31 4.1 2.6 -55 to 150
Units V V A
VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25°C TC=100°C TA=25°C TA=70°C
±20 58 36 135 24 19 35 31 36 31 12 5 3.2
A A mJ V W W °C
Avalanche Energy L=0.05mH C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ Q1 20 50 3.3
Typ Q2 25 56 1.2
Max Q1 Max Q2 25 30 60 67 4 1.6
Units °C/W °C/W °C/W
Rev0 : Sep 2012
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Free Datasheet http://www.datasheet4u.com/
AON6970
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125°C 1.3 1.8 4.4 6.8 6.7 80 0.7 1 35 1171 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.3 284 59 0.6 17 VGS=10V, VDS=15V, ID=20A 8 4.7 2 6.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 15.5 17 2.5 12.3 22.5 0.9 23 11 Min 30 1 5 ±100 2.3 5.4 8.3 8.5 Typ Max Units V µA nA V mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
A. The value of RθJA is measured with t.