AON6973A

AON6973A 30V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested Q1 30V 28A <5.2mΩ <9.5mΩ Q2 30V 32A <3.9mΩ <6.4mΩ Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial 100% Rg Tested DFN5X6B Top View Bottom View Top View Bottom View PIN1 PIN1 Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche Energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A 100ns TC=25°C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Max Q2 30 ±20 32 25 144 30 24 50 63 36 33 13 4.3 2.7 -55 to 150 Units V V A VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG ±20 28 22 112 22 17 32 26 36 31 12 3.6 2.3 A A mJ V W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ Q1 29 56 3.3 Typ Q2 24 50 3 Max Q1 Max Q...