SMD Type
High Voltage Switching Transistor 2SC5161
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
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SMD Type
High Voltage Switching
Transistor 2SC5161
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low VCE(sat). VCE(sat) = 0.15V (Typ.),IC / IB = 1A / 0.2A
+0.2 9.70 -0.2
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
High breakdown voltage.VCEO = 400V Fast switching.tr = 1.0ìs,IC = 0.8A
NPN silicon
transistor
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current * Collector current Collector power dissipation TC = 25 Ta = 25 Junction temperature Storage temperature * Single pulse pw=10ms Tj Tstg Symbol VCBO VCES VEBO ICP IC PC Rating 400 400 7 4 2 10 1 150 -55 to +150 Unit V V V A(Puse) A(DC) W
3 .8 0
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Free Datasheet http://www.datasheet4u.com/
SMD Type
2SC5161
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage collector-emitter breakdown voltage collector-emitter voltage Emitter-base breakdown voltage collecotr cutoff current Emitter cutoff current Collector to emitter saturation voltage Base to emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO VCEO(SUS) BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT cob ton tstg tf IC=50ìA IC=1mA IC=1.0A,IB1=0.1A,L=1mH IE=50...
