2SC5237

2SC5237 Silicon NPN Epitaxial Application High frequency amplifier Features Excellent high frequency characteristics fT = 400 MHz typ High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ Suitable for wide band video amplifier Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 Free Datasheet http://www.datasheet4u.com/ 2SC5237 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC Tj Tstg Ratings 250 250 3 150 300 1.4 8* Junction temperature Storage temperature Note: 1. TC = 25°C 1 Unit V V V mA mA W 150 –55 to +150 °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 250 250 — — 1 Typ — — — — — — — 400 3.5 Max — — 1.0 10 200 1.0 1.0 — 5.0 Unit V V µA µA — V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ VCB = 200 V, IE = 0 VEB = 3 V, IC = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 50 mA IC = 50 mA, IB = 5 mA VCE = 30 V, IC = 50 mA VCB = 30 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: ICBO IEBO hFE* VBE VCE(sat) fT Cob 60 — — 300 — 1. The 2SC2537 is grouped by hFE and its specif...