2N3866

DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistors DESCRIPTION NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits. PINNING - TO-39/1 PIN 1 2 3 emitter base collector handbook, halfpage 2N3866; 2N4427 APPLICATIONS The transistors are intended for use in output, driver or pre-driver stages in VHF and UHF equipment. DESCRIPTION 1 2 MBB199 3 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL VCER 2N3866 2N4427 VCEO collector-emitter voltage 2N3866 2N4427 VEBO emitter-base voltage 2N3866 2N4427 IC IC(AV) Ptot fT Tj RF performance TYPE NUMBER 2N3866 2N4427 f (MHz) 400 175 VCE (V) 28 12 Po (W) 1 1 Gp (dB) >10 >10 η (%) >45 >50 collector current (DC) average collector current total power dissipation transition frequency junction temperature measured over any 20 ms period up to Tmb = 25 °C IC = 50 mA; VCE = 15 V; f = 200 MHz open collector − − − − − 500 − 3.5 2.0 0.4 0.4 3.5 − 200 V V A A W MHz °C open base − − 30 20 V V PARAMETER collector-emitter voltage CONDITIONS RBE = 10 Ω − − 55 40 V V MIN. MAX. UNIT 1995 Oct 27 2 Philips Semiconductors Product specification Silicon planar epi...