2N3866 TRANSISTOR Datasheet

2N3866 Datasheet, PDF, Equivalent


Part Number

2N3866

Description

NPN SILICON HIGH FREQUENCY TRANSISTOR

Manufacture

Advanced Semiconductor

Total Page 1 Pages
Datasheet
Download 2N3866 Datasheet


2N3866
2N3866
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI 2N3866 is a High
Frequency Transistor Designed for
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
IC 400 mA
VCE
PDISS
TJ
TSTG
θJC
30 V
5.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
35 OC/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 5.0 mA
BVCER
IC = 5.0 mA RBE = 10
BVEBO
IC = 100 µA
ICEX
VCE = 55 V
VCE = 30 V
VBE = -1.5 V
VBE = -1.5 V
TC = 200 OC
ICEO
VCE = 28 V
IEBO
VEB = 3.5 V
hFE
VCE = 5.0 V
IC = 50 mA
IC = 360 mA
VCE(SAT)
IC = 100 mA
IB = 20 mA
MINIMUM
30
55
3.5
10
5.0
ft
VCE = 15 V
IC = 50 mA
f = 200 MHz
COB
VCB = 28 V
f = 1.0 MHz
500
GPE
VCC = 28 V
Pout = 1.0 W f = 400 MHz
ηc
10
45
NONE
TYPICAL MAXIMUM
100
500
20
100
200
1.0
3.0
UNITS
V
V
V
µA
µA
µA
---
V
MHz
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Features 2N3866 NPN SILICON HIGH FREQUENCY TRANS ISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI 2N3866 is a High Frequency Tran sistor Designed for Amplifier and Oscil lator Applications. MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 400 mA 30 V 5.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 35 C/W O O O O 1 = Emitte r 2 = Base 3 = Collector CHARACTERISTI CS SYMBOL BVCEO BVCER BVEBO ICEX ICEO I EBO hFE VCE(SAT) ft COB GPE ηc IC = 5. 0 mA IC = 5.0 mA IC = 100 µA VCE = 55 V VCE = 30 V VCE = 28 V VEB = 3.5 V VCE = 5.0 V IC = 100 mA VCE = 15 V VCB = 2 8 V VCC = 28 V TC = 25 C O NONE TES T CONDITIONS RBE = 10 Ω VBE = -1.5 V VBE = -1.5 V TC = 200 C O MINIMUM 30 5 5 3.5 TYPICAL MAXIMUM UNITS V V V 1 00 500 20 100 µA µA µA --V MHz IC = 50 mA IC = 360 mA IB = 20 mA IC = 50 mA f = 200 MHz f = 1.0 MHz Pout = 1.0 W f = 400 MHz 10 5.0 200 1.0 500 3.0 10 45 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL A VENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004.
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