RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
2N3866 / 2N3866A
Features
• Silicon NPN, To-39 packaged VHF/UHF Transist...
RF & MICROWAVE DISCRETE LOW POWER
TRANSISTORS
2N3866 / 2N3866A
Features
Silicon
NPN, To-39 packaged VHF/UHF
Transistor Specified 400 MHz, 28Vdc Characteristics
- Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product
1. Emitter 2. Base 3. Collector
TO-39
DESCRIPTION:
Silicon
NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation Derate above 25ºC
Value 30 55 3.5 400
5.0 28.6
Unit Vdc Vdc Vdc mA
Watts mW/ ºC
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (off)
Symbol
Test Conditions
BVCER BVCEO BVCBO BVEBO
ICEO ICEX
(on)
HFE
VCE(sat)
Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms)
Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IE = 0, IC = 0.1 mAdc)
Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current (VCE = 28 Vdc, IB = 0)
Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.5 Vdc)
DC Current Gain (IC = 360 mAdc...