2N3866A TRANSISTORS Datasheet

2N3866A Datasheet, PDF, Equivalent


Part Number

2N3866A

Description

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacture

Microsemi Corporation

Total Page 5 Pages
Datasheet
Download 2N3866A Datasheet


2N3866A
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N3866 / 2N3866A
Features
Silicon NPN, To-39 packaged VHF/UHF Transistor
Specified 400 MHz, 28Vdc Characteristics
- Output Power = 1.0 Watt
- Minimum Gain = 10 dB
- Efficiency = 45%
800 MHz Current-Gain Bandwidth Product
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation
Derate above 25ºC
Value
30
55
3.5
400
5.0
28.6
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
MSC1067.PDF 3-10-99

2N3866A
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCER
BVCEO
BVCBO
BVEBO
ICEO
ICEX
(on)
HFE
VCE(sat)
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
Collector-Base Breakdown Voltage
(IE = 0, IC = 0.1 mAdc)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 55 Vdc, VBE = 1.5 Vdc)
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc) Both
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
2N3866 / 2N3866A
Min.
55
30
55
3.5
-
-
Value
Typ.
-
-
-
-
-
-
Max.
-
-
-
-
20
100
Unit
Vdc
Vdc
Vdc
Vdc
µA
µA
5.0 -
-
10 - 200
25 - 200
-
-
-
- - 1.0 Vdc
DYNAMIC
Symbol
Test Conditions
fT
COB
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
2N3866
2N3866A
Min.
500
800
-
Value
Typ.
800
-
2.8
Max.
-
-
3.5
MSC1067.PDF 3-10-99
Unit
MHz
pF


Features 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 1 8936-1013 PHONE: (215) 631-9840 FAX: (2 15) 631-9855 2N3866 / 2N3866A RF & MIC ROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon NPN, To-39 pac kaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Pow er = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain B andwidth Product • 1. Emitter 2. Ba se 3. Collector TO-39 DESCRIPTION: Si licon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and out put stages. Also suitable for oscillato r and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C ) Symbol VCEO VCBO VEBO IC Parameter Co llector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 30 55 3.5 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipa tion Derate above 25ºC 5.0 28.6 Watts mW/ ºC MSC1067.PDF 3-10-99 2N3866 / 2N3866A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BV.
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