2N3867 Transistors Datasheet

2N3867 Datasheet, PDF, Equivalent


Part Number

2N3867

Description

Silicon PNP Power Transistors

Manufacture

Microsemi Corporation

Total Page 3 Pages
Datasheet
Download 2N3867 Datasheet


2N3867
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
APPLICATIONS:
High-Speed Switching
Medium-Current Switching
High-Frequency Amplifiers
FEATURES:
Collector-Emitter Sustaining Voltage: VCEO(sus) = - 40 Vdc (Min)
DC Current Gain: hFE = 40-200 @ IC = 1.5 Adc
Low Collector-Emitter Saturation Voltage:
VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc
High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices
with excellent switching speeds, frequency response, gain linearity,
saturation voltages, high current gain, and safe operating areas.
They are intended for use in Commercial, Industrial, and Military
power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are
utilized to further increase the SOA capability and inherent reliability
of these devices. The temperature range to 200° C permits reliable
operation in high ambients, and the hermetically sealed package
insures maximum reliability and long life.
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VCEO*
VCB*
VEB*
IC*
IC*
IB*
TSTG*
TJ*
PD*
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
Storage Temperature
Operating Junction Temperature
Total Device Dissipation
TC = 25° C
Derate above 25° C
PD* Total Device Dissipation
TA = 25° C
Derate above 25° C
θ JC
Thermal Resistance
Junction to Case
Junction to Ambient
* Indicates JEDEC registered data.
MSC1059.PDF 05-19-99
2N3867
Silicon PNP Power
Transistors
TO-5
VALUE
- 40
- 40
- 4.0
10
3.0
0.5
-65 to 200
-65 to 200
6.0
34.3
1.0
5.71
29
175
UNITS
Vdc
Vdc
Vdc
Adc
Adc
Adc
°C
°C
Watts
mW/° C
Watts
mW/° C
° C/W
° C/W

2N3867
2N3867
ELECTRICAL CHARACTERISTICS:
(25°Case Temperature Unless Otherwise Noted)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VCEO(sus)*
BVCBO*
BVEBO*
ICEX*
ICBO*
hFE*
VCE(sat)*
Collector-Emitter
Sustaining Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
(Note 1)
Collector-Emitter
Saturation Voltage
(Note 1)
IC = 20 mAdc, IB = 0 (Note 1)
IC = 100 µAdc, IE = 0
IE = 100 µAdc, IC = 0
VCE = - 40V, VBE(off) = 2.0 Vdc
VCB = - 40V, IE = 0, TC = 150° C
IC = 500 mAdc, VCE = - 1.0 Vdc
IC = 1.5 Adc, VCE = - 2.0 Vdc
IC = 2.5 Adc, VCE = - 3.0 Vdc
IC = 3.0 Adc, VCE = - 5.0 Vdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
VBE(sat)*
Base-Emitter Saturation
Voltage
(Note 1)
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
fT* Current Gain Bandwidth IC = 100 mAdc, VCE = - 5.0 Vdc, ftest = 20 MHz
Product (Note 2)
Cob*
Cib*
td*
tr*
ts*
tf*
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
VCB = - 10 Vdc, IE = 0, f = 0.1 MHz
VEB = - 3.0 Vdc, IC = 0, f = 0.1 MHz
VCC = - 30 Vdc, VBE(off) = 0, IC =1.5 Adc,
IB1 = 150 mAdc
VCC = - 30 Vdc, VBE(off) = 0, IC =1.5 Adc,
IB1 = 150 mAdc
VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc
VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc
Note 1: Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
Note 2: fT = |hfe| * ftest
* Indicates JEDEC registered data.
VALUE
Min. Max.
- 40 ----
Units
Vdc
- 40 ---- Vdc
- 4.0 ---- Vdc
---- 1.0 µAdc
---- 150 µAdc
50 ---- ----
40 200 ----
25 ---- ----
20 ---- ----
---- - 0.5 Vdc
---- - 0.75 Vdc
---- - 1.3 Vdc
---- - 1.0 Vdc
0.9 - 1.4 Vdc
---- - 2.0 Vdc
60 ---- MHz
---- 120 pF
---- 1000 pF
---- 35 ns
---- 65 ns
---- 325 ns
---- 75 ns
MSC1059.PDF 05-19-99


Features 7516 Central Industrial Drive Riviera Be ach, Florida 33404 PHONE: (561) 842-030 5 FAX: (561) 845-7813 APPLICATIONS: • • 2N3867 High-Speed Switching Medium-Current Switching High-Frequenc y Amplifiers Collector-Emitter Sustaini ng Voltage: VCEO(sus) = - 40 Vdc (Min) DC Current Gain: h FE = 40-200 @ IC = 1 .5 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc High Current-Gain - Bandwidth P roduct: fT = 90 MHz (Typ) FEATURES: • • • Silicon PNP Power Transi stors DESCRIPTION: These power transis tors are produced by PPC's DOUBLE DIFFU SED PLANAR process. This technology pro duces high voltage devices with excelle nt switching speeds, frequency response , gain linearity, saturation voltages, high current gain, and safe operating a reas. They are intended for use in Comm ercial, Industrial, and Military power switching, amplifier, and regulator app lications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA .
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