2SK1057

2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET REJ03G0906-0200 (Previous: ADE-208-1244) Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Source (Flange) 3. Drain S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 5 Free Datasheet http://www.datasheet4u.com/ 2SK1056, 2SK1057, 2SK1058 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1056 2SK1057 2SK1058 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C VGSS ID IDR 1 Pch* Tch Tstg Symbol VDSX Ratings 120 140 160 ±15 7 7 100 150 –55 to +150 V A A W Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK1056 2SK1057 2SK1058 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss ton toff Symbol V(BR)DSX Min 120 140 160 ±15 0.15 — 0.7 — — — — — — — — 1.0 600 350 10 180 60 — 1.45 12 1.4 — — — — — V V V S pF pF pF ns ns IG = ±100 µA, VDS = 0 ID = 100 mA, VDS = 10 V ID = 7 A, VGD = 0 * 2 ID = 3 A, VDS = 10 V * VGS = –5 V, VDS = 10 V, f = 1 MHz VDD = 20 V, ID = 4 A 2 Typ — Max — Unit V Test conditio...