(PDF) 2N3903 Datasheet PDF | Diotec Semiconductor





2N3903 Datasheet PDF

Part Number 2N3903
Description Si-Epitaxial PlanarTransistors
Manufacture Diotec Semiconductor
Total Page 2 Pages
PDF Download Download 2N3903 Datasheet PDF

Features: Datasheet pdf 2N3903, 2N3904 NPN Version 2004-01-20 S witching Transistors Si-Epitaxial Plana rTransistors NPN Power dissipation – Verlustleistung Plastic case Kunststof fgehäuse Weight approx. – Gewicht ca . Plastic material has UL classificatio n 94V-0 Gehäusematerial UL94V-0 klassi fiziert Standard Pinning 1=C 2=B 3=E 6 25 mW TO-92 (10D3) 0.18 g Standard pac kaging taped in ammo pack Standard Lief erform gegurtet in Ammo-Pack Maximum r atings (TA = 25/C) Collector-Emitter-vo ltage Collector-Base-voltage Emitter-Ba se-voltage Power dissipation – Verlus tleistung Collector current – Kollekt orstrom (dc) Junction temp. – Sperrsc hichttemperatur Storage temperature – Lagerungstemperatur B open E open C op en VCE0 VCE0 VEB0 Ptot IC Tj TS Grenzw erte (TA = 25/C) 2N3903, 2N3904 40 V 60 V 6V 625 mW 1) 600 mA 150/C - 55…+ 1 50/C Characteristics (Tj = 25/C) Min. Collector saturation volt. – Kollekto r-Sättigungsspannung IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Collector c.

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2N3903 datasheet
2N3903, 2N3904
NPN
Version 2004-01-20
Standard Pinning
1=C 2=B 3=E
Si-Epitaxial PlanarTransistors
Switching Transistors
NPN
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCE0
VEB0
Ptot
IC
Tj
TS
Grenzwerte (TA = 25/C)
2N3903, 2N3904
40 V
60 V
6V
625 mW 1)
600 mA
150/C
- 55…+ 150/C
Characteristics (Tj = 25/C)
Collector saturation volt. – Kollektor-Sättigungsspannung
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
VCEsat
Base saturation voltage – Basis-Sättigungsspannung
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VBEsat
VBEsat
Collector cutoff current – Kollektorreststrom
VCE = 30 V, VEB = 3 V
ICEV
Emitter cutoff current – Emitterreststrom
VCE = 30 V, VEB = 3 V
IEBV
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 200 mV
– – 300 mV
– – 850 mV
– – 950 mV
– – 50 nA
– – 50 nA
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
30

2N3903 datasheet
General Purpose Transistors
2N3903, 2N3904
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 1 V, IC = 0.1 mA
VCE = 1 V, IC = 1 mA
VCE = 1 V, IC = 10 mA
VCE = 1 V, IC = 50 mA
VCE = 1 V, IC = 510 mA
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 10 mA,
f = 100 MHz
2N3903
2N3904
fT
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 5 V, IE = ie = 0, f = 100 kHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 100 kHz
CEB0
Noise figure – Rauschzahl
RVGCE==15kVS,
IC = 100 :A
f = 10 Hz ...15.7
kHz
2N3903
2N3904
F
F
Switching times – Schaltzeiten
turn-on time
turn-off time
ICon = 10 mA,
IBon = - IBoff = 1 mA
ton
toff
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
20 –
40 –
35 –
70 –
50 – 150
100 – 300
30 –
60 –
15 –
30 –
250 MHz
300 MHz
– – 4 pF
– – 8 pF
– – 6 dB
– – 5 dB
– – 70
– – 250
RthA 200 K/W 1)
2N3905, 2N3906
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
31





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