Document
SGB10N60A
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for: - Motor controls - Inverter
• NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
• Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C G
E
PG-TO-263-3-2
Type SGB10N60A
VCE
IC
VCE(sat)
Tj
Marking
Package
600V 10A
2.3V
150°C G10N60A PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering MSL1)
Symbol VCE IC
ICpuls VGE EAS
tSC Ptot Tj , Tstg
Value
Unit
600
V
A 20 10.6
40
40
±20
V
70
mJ
10
µs
92
W
-55...+150
°C
245
1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 July 07
SGB10N60A
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient1)
Symbol RthJC RthJA
Conditions
Max. Value
Unit
1.35
K/W
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage Collector-emitter saturation voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate-emitter leakage current Transconductance Dynamic Characteristic
V(BR)CES VCE(sat)
VGE(th) ICES
IGES gfs
VGE=0V, IC=500µA VGE = 15V, IC=10A Tj=25°C Tj=150°C IC=300µA,VCE=VGE VCE=600V,VGE=0V Tj=25°C Tj=150°C VCE=0V,VGE=20V VCE=20V, IC=10A
Input capacitance Output capacitance Reverse transfer capacitance Gate charge
Ciss Coss Crss QGate
Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current2)
LE IC(SC)
VCE=25V, VGE=0V, f=1MHz VCC=480V, IC=10A VGE=15V
VGE=15V,tSC≤10µs VCC ≤ 600V, Tj ≤ 150°C
min.
600
1.7 3
-
-
-
-
Value Typ.
-
2 2.3 4
6.7
550 62 42 52
7
100
Unit max.
-V
2.4 2.8 5
µA 40 1500 100 nA -S
660 pF 75 51 68 nC
- nH
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3 July 07
SGB10N60A
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy
td(on) tr td(off) tf Eon Eoff Ets
Tj=25°C, VCC=400V,IC=10A, VGE=0/15V, RG=25Ω, Lσ1) =180nH, Cσ1) =55pF
Energy losses include “tail” and diode reverse recovery.
min.
-
Value typ.
Unit max.
28 12 178 24 0.15 0.17 0.320
34 ns 15 214 29 0.173 mJ 0.221 0.394
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy
td(on) tr td(off) tf Eon Eoff Ets
Tj=150°C VCC=400V,IC=10A, VGE=0/15V, RG=25Ω Lσ1) =180nH, Cσ1) =55pF
Energy losses include “tail” and diode reverse recovery.
min.
-
Value typ.
Unit max.
28 12 198 26 0.260 0.280 0.540
34 ns 15 238 32 0.299 mJ 0.364 0.663
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
3
Rev. 2.3 July 07
SGB10N60A
IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT
50A
Ic
TC=80°c
40A
30A
20A 10A TC=110°c
Ic 0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 25Ω)
tp = 5 µs
10A
1A
0,1A 1V
1 5 µs 5 0 µs 2 0 0 µs 1ms DC
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C)
120W
100W
80W
60W
40W
20W
0W 25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C)
25A
20A
15A
10A
5A
0A 25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2.3 July 07
Ptot, POWER DISSIPATION IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
SGB10N60A
35A
30A
25A 20A 15A 10A
5A
V G E= 2 0 V 15V 13V 11V 9V 7V 5V
0A
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOL.