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G10N60A Dataheets PDF



Part Number G10N60A
Manufacturers Infineon
Logo Infineon
Description Fast IGBT
Datasheet G10N60A DatasheetG10N60A Datasheet (PDF)

SGB10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSp.

  G10N60A   G10N60A


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SGB10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-263-3-2 Type SGB10N60A VCE IC VCE(sat) Tj Marking Package 600V 10A 2.3V 150°C G10N60A PG-TO-263-3-2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering MSL1) Symbol VCE IC ICpuls VGE EAS tSC Ptot Tj , Tstg Value Unit 600 V A 20 10.6 40 40 ±20 V 70 mJ 10 µs 92 W -55...+150 °C 245 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 July 07 SGB10N60A Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient1) Symbol RthJC RthJA Conditions Max. Value Unit 1.35 K/W 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Dynamic Characteristic V(BR)CES VCE(sat) VGE(th) ICES IGES gfs VGE=0V, IC=500µA VGE = 15V, IC=10A Tj=25°C Tj=150°C IC=300µA,VCE=VGE VCE=600V,VGE=0V Tj=25°C Tj=150°C VCE=0V,VGE=20V VCE=20V, IC=10A Input capacitance Output capacitance Reverse transfer capacitance Gate charge Ciss Coss Crss QGate Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current2) LE IC(SC) VCE=25V, VGE=0V, f=1MHz VCC=480V, IC=10A VGE=15V VGE=15V,tSC≤10µs VCC ≤ 600V, Tj ≤ 150°C min. 600 1.7 3 - - - - Value Typ. - 2 2.3 4 6.7 550 62 42 52 7 100 Unit max. -V 2.4 2.8 5 µA 40 1500 100 nA -S 660 pF 75 51 68 nC - nH -A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.3 July 07 SGB10N60A Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets Tj=25°C, VCC=400V,IC=10A, VGE=0/15V, RG=25Ω, Lσ1) =180nH, Cσ1) =55pF Energy losses include “tail” and diode reverse recovery. min. - Value typ. Unit max. 28 12 178 24 0.15 0.17 0.320 34 ns 15 214 29 0.173 mJ 0.221 0.394 Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets Tj=150°C VCC=400V,IC=10A, VGE=0/15V, RG=25Ω Lσ1) =180nH, Cσ1) =55pF Energy losses include “tail” and diode reverse recovery. min. - Value typ. Unit max. 28 12 198 26 0.260 0.280 0.540 34 ns 15 238 32 0.299 mJ 0.364 0.663 1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2.3 July 07 SGB10N60A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 50A Ic TC=80°c 40A 30A 20A 10A TC=110°c Ic 0A 10Hz 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 25Ω) tp = 5 µs 10A 1A 0,1A 1V 1 5 µs 5 0 µs 2 0 0 µs 1ms DC 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 120W 100W 80W 60W 40W 20W 0W 25°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) 25A 20A 15A 10A 5A 0A 25°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.3 July 07 Ptot, POWER DISSIPATION IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT SGB10N60A 35A 30A 25A 20A 15A 10A 5A V G E= 2 0 V 15V 13V 11V 9V 7V 5V 0A 0V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOL.


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