ME45P04/ME45P04-G
P- Channel 40-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME45P04-G is the P-Channel logic enhancement mode...
ME45P04/ME45P04-G
P- Channel 40-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME45P04-G is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦18mΩ@VGS=-10V ● RDS(ON)≦25mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN
CONFIGURATION
(TO-252) Top View
e Ordering Information: ME45P04 (Pb-free)
ME45P04-G (Green product-Halogen free )
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Maximum Power Dissipation* Operating Junction Temperature Thermal Resistance-Junction to Case* TC=25℃ TC=70℃ TC=25℃ TC=70℃
Symbol
VDS VGS ID IDM PD TJ RθJC
Maximum Ratings
-40 ±20 -30 -23 -120 25 16 -55 to 150 5
Unit
V V A A W ℃ ℃/W
*The device mounted on 1in2 FR4 board with 2 oz copper
Mar, 2012-Ver1.3
Free Datasheet http://www.datasheet4u.com/
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ME45P04/ME45P04-G
P- Channel 40-V (D-...