MOSFETs Silicon N-Channel MOS (π-MOS)
TK20A20D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain...
MOSFETs Silicon N-Channel MOS (π-MOS)
TK20A20D
1. Applications
Switching Voltage
Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.07 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK20A20D
1: Gate (G) 2: Drain (D) 3: Source (S)
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Gate-source voltage
VGSS
±20
Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature
(Tc = 25)
(Note 1) (Note 1)
(Note 2) (Note 3) (Note 1) (Note 1)
ID IDP PD EAS IAR IDR IDRP Tch
20
A
80
45
W
169
mJ
20
A
20
80
150
Storage temperature
Tstg
-55 to 150
Isolation voltage (RMS) Mounting torque
(t = 1.0 s)
VISO(RMS) TOR
2000 0.6
V Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precauti...