TK20J50D

TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK20J50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 1.0 15.9 MAX. Unit: mm Ф3.2 ± 0.2 4.5 20.0 ± 0.3 9.0 2.0 3.3 MAX. 20.5 ± 0.5 Absolute Maximum Ratings (Ta = 25°C) 2.0 ± 0.3 1.0 ＋0.3 －0.25 Characteristics Symbol Rating Unit 5.45 ± 0.2 5.45 ± 0.2 2.8 4.8 MAX. 1.8 MAX. ＋0.3 0.6 －0.1 Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg 500 V ±30 V 20 A 80 280 W 470 mJ 20 A 28 mJ 150 °C −55 to 150 °C 123 1. Gate 2. Drain(heat sink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliabilit...