TK20P04M1

TK20P04M1 MOSFETs Silicon N-Channel MOS (U-MOS-H) 1. Applications DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 3.7 nC (typ.) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating 40 ±20 20 60 27 10.4 20 150 -55 to 150 W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...