TK20X60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK20X60U
Switching Regulator Applications
...
TK20X60U
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK20X60U
Switching
Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.175 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 20 40 150 144 15 15 150 −55 to 150 Unit V V A W mJ A mJ °C °C
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
⎯ ⎯ 2-9F1C
Weight: 0.74 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic...