Planar Transistor. 2N3904 Datasheet

2N3904 Transistor. Datasheet pdf. Equivalent

Part 2N3904
Description NPN Silicon Epitaxial Planar Transistor
Feature ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications..
Manufacture Semtech Corporation
Datasheet
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2N3904
ST 2N3903 / 2N3904
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary types the PNP transistors
2N3905 and 2N3906 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Weight approx. 0.19g
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
60
40
6
200
625
150
- 55 to + 150
V
V
V
mA
mW
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/03/2007



2N3904
ST 2N3903 / 2N3904
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 100 mA
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
hFE
20
-
hFE
40
-
hFE
35
-
hFE
70
-
hFE
50
150
hFE
100
300
hFE
30
-
hFE
60
-
hFE
15
-
hFE
30
-
Collector Cutoff Current
at VCB = 30 V
Emitter Cutoff Current
at VEB = 6 V
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
ICBO
-
50
IEBO
-
50
V(BR)CBO
60
-
V(BR)CEO
40
-
V(BR)EBO
6
-
VCEsat
-
0.2
VCEsat
-
0.3
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Gain Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector Base Capacitance
at VCB = 5 V, f = 100 KHz
Emitter Base Capacitance
at VEB = 0.5 V, f = 100 KHz
Thermal Resistance Junction to Ambient
2N3903
2N3904
VBEsat
VBEsat
fT
fT
Ccb
Ceb
RthA
-
0.85
-
0.95
250
-
300
-
-
4
-
8
-
250 1)
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Unit
-
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
V
V
MHz
MHz
pF
pF
K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/03/2007





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