NPN Transistors. 2N3904 Datasheet

2N3904 Transistors. Datasheet pdf. Equivalent

Part 2N3904
Description General Purpose NPN Transistors
Feature 2N3904 2N3904 NPN Si-Epitaxial-Planar Switching Transistors Si-Epitaxial-Planar Schalttransistore.
Manufacture Diotec Semiconductor
Datasheet
Download 2N3904 Datasheet

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2N3904
2N3904
2N3904
General Purpose NPN Transistors
Universal-NPN-Transistoren
Version 2017-12-06
TO-92 (10D3)
Typical Applications
Signal processing,
Switching, Amplification
Commercial grade 1)
E BC
Features
General Purpose
Compliant to RoHS, REACH,
Conflict Minerals 1)
Mechanical Data 1)
2 x 2.54
Taped in ammo pack
(Raster 2.54)
Weight approx.
Dimensions - Maße [mm]
Case material
Solder & assembly conditions
IC = 200 mA
hFE1 ~ 200
Tjmax = 150°C
VCEO = 40 V
Ptot = 625 mW
RoHS
Pb
4000
0.18 g
UL 94V-0
260°C/10s
MSL N/A
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
Besonderheiten
Universell anwendbar
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanische Daten 1)
Gegurtet in Ammo-Pack
(Raster 2.54)
Gewicht ca.
Gehäusematerial
Löt- und Einbaubedingungen
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
2N3906
Maximum ratings 2)
Collector-Emitter-voltage - Kollektor-Emitter-Spannung
Collector-Base-voltage - Kollektor-Basis-Spannung
Emitter-Base-voltage - Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
DC
VCEO
VCBO
VEBO
Ptot
IC
Tj
TS
Grenzwerte 2)
2N3904
40 V
60 V
6V
625 mW 3)
200 mA
-55...+150°C
-55…+150°C
Characteristics
DC current gain – Kollektor-Basis-Stromverhältnis 4)
IC = 0.1 mA,
IC = 1 mA,
IC = 10 mA,
IC = 50 mA,
IC = 100 mA,
VCE = 1 V
VCE = 1 V
VCE = 1 V
VCE = 1 V
VCE = 1 V
Tj = 25°C Min.
40
70
hFE 100
60
30
Kennwerte
Typ.
Max.
––
––
– 300
––
––
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben
3 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
4 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1



2N3904
2N3904
Characteristics
Tj = 25°C
h-Parameters at/bei VCE = 10 V, - IC = 1 mA, f = 1 kHz
Small signal current gain – Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverse voltage transfer ratio – Spannungsrückwirkung
hfe
hie
hoe
hre
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung 1)
VCEsat
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VBEsat
VCE = 30 V, VEB = 3 V
ICBX
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VCE = 30 V, - VEB = 3 V
Gain-Bandwidth Product – Transitfrequenz
IEBV
IC = 10 mA, VCE = 20 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
fT
VCB = 5 V, IE = ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
CEBO
VCE = 5 V, IC = 1 µA, RG = 1 kΩ, f = 1 kHz
Switching times – Schaltzeiten (between 10% and 90% levels)
F
delay time
rise time
VCC = 3 V, VBE = 0.5 V
IC = 10 mA, IB1 = 1mA
storage time
fall time
VCC = 3 V, IC = 10 mA,
IB1 = IB2 = 1 mA
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
td
tr
ts
tf
RthA
Min.
Kennwerte
Typ.
Max.
100
1 kΩ
1 µS
0.5*10-4
400
10 kΩ
40 µS
8*10-4
– – 0.2 V
– – 0.3 V
0.65 V – 0.85 V
– – 0.95 V
– – 50 nA
– –- 50 nA
300 MHz
– – 4 pF
– – 8 pf
– – 5 dB
– – 35 ns
– – 35 ns
– – 200 ns
– – 50 ns
< 200 K/W 2)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG





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