STP150N3LLH6

STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features Type STD150N3LLH6 STP150N3LLH6 STu150N3LLH6 ■ ■ ■ ■ VDSS 30 V 30 V 30 V RDS(on) max 0.0028 Ω 0.0033 Ω 0.0033 Ω ID 80 A 80 A 80 A 3 1 3 2 1 DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 1 2 3 TO-220 Application ■ Switching applications Figure 1. Internal schematic diagram $4!"OR Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ' 3 !-V Table 1. Device summary Marking 150N3LLH6 150N3LLH6 150N3LLH6 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube Order codes STD150N3LLH6 STP150N3LLH6 STU150N3LLH6 September 2009 Doc ID 15227 Rev 3 1/16 www.st.com 16 Free Datasheet http://www.datasheet4u.com/ Contents STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 4 5 6 Test circuit ............................................... 8 Package mechanical data . . . . . . . . . . . . . ....