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STD75N3LLH6 Dataheets PDF



Part Number STD75N3LLH6
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel MOSFET
Datasheet STD75N3LLH6 DatasheetSTD75N3LLH6 Datasheet (PDF)

STD75N3LLH6, STP75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK STripFET™ VI DeepGATE™ Power MOSFET Features TAB TAB Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S VDSS RDS(on) max < 0.0055 Ω ID 3 2 1 1 3 DPAK TAB 30 V < 0.0059 Ω 75 A IPAK TAB ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 2 1 3 3 1 2 Short IPAK TO-220 Application Sw.

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STD75N3LLH6, STP75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK STripFET™ VI DeepGATE™ Power MOSFET Features TAB TAB Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S VDSS RDS(on) max < 0.0055 Ω ID 3 2 1 1 3 DPAK TAB 30 V < 0.0059 Ω 75 A IPAK TAB ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 2 1 3 3 1 2 Short IPAK TO-220 Application Switching applications Figure 1. Internal schematic diagram D (TAB or 2) Description This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. G(1) S(3) AM01474v1 Table 1. Device summary Marking Package DPAK TO-220 75N3LLH6 IPAK Short IPAK Tube Packaging Tape and reel Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S July 2011 Doc ID 15978 Rev 4 1/21 www.st.com 21 Free Datasheet http://www.datasheet4u.com/ Contents STD/P/U75N3LLH6, STU75N3LLH6-S Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 Doc ID 15978 Rev 4 Free Datasheet http://www.datasheet4u.com/ STD/P/U75N3LLH6, STU75N3LLH6-S Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 70 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 30 ±20 75 56 47 300 60 0.4 -55 to 175 Unit V V A A A A W W/°C °C ID ID IDM (2) PTOT Tj Tstg Operating junction temperature storage temperature 1. The value is rated according to Rthj-case 2. Pulse width limited by safe operating area Table 3. Symbol Thermal data Value Parameter DPAK TO-220 2.5 100 35 275 300 275 62.5 100 IPAK Short IPAK Unit Rthj-case Rthj-amb Rthj-pcb(1) TJ Thermal resistance junction-case (drain) (steady state) Thermal resistance junction-amb max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose °C/W °C/W °C/W °C 1. When mounted on FR-4 board of 1in², 2oz Cu. t < 10 sec Doc ID 15978 Rev 4 3/21 Free Datasheet http://www.datasheet4u.com/ Electrical characteristics STD/P/U75N3LLH6, STU75N3LLH6-S 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) On/off states Parameter Test conditions Min. 30 1 10 ±100 1 1.7 2.5 Typ. Max. Unit V µA µA nA V Ω Ω Ω Ω Drain-source I = 250 µA breakdown voltage (VGS = 0) D Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = 30 V VDS =30 V TC = 125 °C VGS = ± 20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 37.5 A SMD version 0.0042 0.0055 0.0046 0.0059 0.0065 0.008 RDS(on) Static drain-source on resistance VGS = 10 V, ID = 37.5 A VGS = 4.5 V, ID = 37.5 A SMD version VGS = 4.5 V, ID = 37.5 A 0.0069 0.0084 Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 RG Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Gate input resistance Test conditions Min. 1350 230 140 Typ. 1690 290 176 17 8 6 3.9 4.1 Max. 2030 350 210 23.8 11.2 8.4 5.5 5.7 Unit pF pF pF nC nC nC nC nC Ω VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 15 V, ID = 75 A, VGS = 4.5 V (see Figure 14) VDD=15 V, ID = 75 A VGS =5 V (Figure 19) f=1 MHz gate bias Bias=0 test signal level=20 mV open drain 1.25 1.7 2 4/21 Doc ID 15978 Rev 4 Free Datasheet http://www.datasheet4u.com/ STD/P/U75N3LLH6, STU75N3LLH6-S Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 15 V, ID = 37.5 A RG = 4.7 Ω VGS = 5 V (see Figure 13) Min. Typ. 9.5 30 37 12 Max Unit ns ns ns ns - - Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 37.5 A, VGS = 0 Test conditions Min. Typ. Max. 75 300 1.1 24 16.8 1.4 Unit A A V ns nC A - ISD = 75 A, Reverse recovery time di/dt = 1.


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