Document
STD75N3LLH6, STP75N3LLH6 STU75N3LLH6, STU75N3LLH6-S
N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK STripFET™ VI DeepGATE™ Power MOSFET
Features
TAB
TAB
Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S
VDSS
RDS(on) max < 0.0055 Ω
ID
3 2 1
1
3
DPAK
TAB
30 V
< 0.0059 Ω
75 A
IPAK
TAB
■ ■ ■ ■
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
2 1
3
3 1 2
Short IPAK
TO-220
Application
Switching applications Figure 1. Internal schematic diagram
D (TAB or 2)
Description
This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
G(1)
S(3)
AM01474v1
Table 1.
Device summary
Marking Package DPAK TO-220 75N3LLH6 IPAK Short IPAK Tube Packaging Tape and reel
Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S
July 2011
Doc ID 15978 Rev 4
1/21
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Contents
STD/P/U75N3LLH6, STU75N3LLH6-S
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
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STD/P/U75N3LLH6, STU75N3LLH6-S
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 70 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 30 ±20 75 56 47 300 60 0.4 -55 to 175 Unit V V A A A A W W/°C °C
ID ID IDM
(2)
PTOT
Tj Tstg
Operating junction temperature storage temperature
1. The value is rated according to Rthj-case 2. Pulse width limited by safe operating area
Table 3.
Symbol
Thermal data
Value Parameter DPAK TO-220 2.5 100 35 275 300 275 62.5 100 IPAK Short IPAK Unit
Rthj-case Rthj-amb Rthj-pcb(1) TJ
Thermal resistance junction-case (drain) (steady state) Thermal resistance junction-amb max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose
°C/W °C/W °C/W °C
1. When mounted on FR-4 board of 1in², 2oz Cu. t < 10 sec
Doc ID 15978 Rev 4
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Electrical characteristics
STD/P/U75N3LLH6, STU75N3LLH6-S
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th)
On/off states
Parameter Test conditions Min. 30 1 10 ±100 1 1.7 2.5 Typ. Max. Unit V µA µA nA V Ω Ω Ω Ω
Drain-source I = 250 µA breakdown voltage (VGS = 0) D Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = 30 V VDS =30 V TC = 125 °C VGS = ± 20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 37.5 A SMD version
0.0042 0.0055 0.0046 0.0059 0.0065 0.008
RDS(on)
Static drain-source on resistance
VGS = 10 V, ID = 37.5 A VGS = 4.5 V, ID = 37.5 A SMD version VGS = 4.5 V, ID = 37.5 A
0.0069 0.0084
Table 5.
Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 RG
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Gate input resistance Test conditions Min. 1350 230 140 Typ. 1690 290 176 17 8 6 3.9 4.1 Max. 2030 350 210 23.8 11.2 8.4 5.5 5.7 Unit pF pF pF nC nC nC nC nC Ω
VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 15 V, ID = 75 A, VGS = 4.5 V (see Figure 14) VDD=15 V, ID = 75 A VGS =5 V (Figure 19) f=1 MHz gate bias Bias=0 test signal level=20 mV open drain
1.25
1.7
2
4/21
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STD/P/U75N3LLH6, STU75N3LLH6-S
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 15 V, ID = 37.5 A RG = 4.7 Ω VGS = 5 V (see Figure 13) Min. Typ. 9.5 30 37 12 Max Unit ns ns ns ns
-
-
Table 7.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 37.5 A, VGS = 0 Test conditions Min. Typ. Max. 75 300 1.1 24 16.8 1.4 Unit A A V ns nC A
-
ISD = 75 A, Reverse recovery time di/dt = 1.