2N4033

2N4033 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb ≤ 45 C at T case ≤ 45 o C St orage Temperature Max. Operating Junction Temperature o Value -80 -80 -5 -1 0.8 4 -55 to 200 200 Unit V V V A W W o o C C 1/6 November 1997 2N4033 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 44 218 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -60 V V CE = -60 V I C = -10 µ A T amb = 150 o C -80 Min. Typ . Max. -50 -50 Un it nA µA V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) V CE(sat )∗ V BE(s at)∗ hFE∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain I C = -10 mA -80 V I E = -10 µ A -5 V I C = -150 mA I C = -500 mA I C = -150 mA I C = -500 mA I C = -100 µ A I C = -100 mA I C = -500 mA I C = -1 A I C = -100 mA T amb = -55 oC I...