DatasheetsPDF.com

GM5824

GTM

NPN SILICON EPITAXIAL PLANAR TRANSISTOR

CORPORATION GM5824 Description Features ISSUED DATE :2006/03/10 REVISED DATE : N P N S I L I C O N E P I TA X I A L P ...


GTM

GM5824

File Download Download GM5824 Datasheet


Description
CORPORATION GM5824 Description Features ISSUED DATE :2006/03/10 REVISED DATE : N P N S I L I C O N E P I TA X I A L P L A N A R T R A N S I S T O R The GM5824 is designed for high speed switching and low frequency amplifier applications. 60 Volt VCEO 3 Amp continuous current Low saturation voltage Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Min. 60 60 6 120 Typ. 200 20 50 150 30 Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 60 60 6 3 6 1.2 Unit V V V A A W Electrical Characteristics (Ta = 25 BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE *fT Cob Ton (Turn-on time) Tstg (Storage time) Tf (Fall time) *Non repetitive pulse , unless otherwise noted) Max. Unit Test Conditions V IC=100uA, IE=0 V IC=1mA, IB=0 V IE=100uA, IC=0 1.0 uA VCB=40V, IE=0 1.0 uA VEB=4V, IC=0 500 mV IC=2A, IB=0.2A 390 VCE=2V, IC=100mA MHz VCE=10V, IE=-100mA, f=10MHz pF VCB=10V, IE=0mA, f=1MHz ns VCC 25V, IC=3A, IB1=300mA, IB2=-300mA Switching characteristics measurement circuit Classification Of hFE Rank Range Q 120 ~ 270 R 180 ~ 390 1/2 Free Datasheet http://...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)