NPN SILICON EPITAXIAL PLANAR TRANSISTOR
CORPORATION
GM5824
Description Features
ISSUED DATE :2006/03/10 REVISED DATE :
N P N S I L I C O N E P I TA X I A L P ...
Description
CORPORATION
GM5824
Description Features
ISSUED DATE :2006/03/10 REVISED DATE :
N P N S I L I C O N E P I TA X I A L P L A N A R T R A N S I S T O R
The GM5824 is designed for high speed switching and low frequency amplifier applications. 60 Volt VCEO 3 Amp continuous current Low saturation voltage
Package Dimensions
SOT-89
REF. A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF. G H I J K L M
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Min. 60 60 6 120 Typ. 200 20 50 150 30 Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 60 60 6 3 6 1.2 Unit
V V V A A W
Electrical Characteristics (Ta = 25
BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE *fT Cob Ton (Turn-on time) Tstg (Storage time) Tf (Fall time)
*Non repetitive pulse
, unless otherwise noted) Max. Unit Test Conditions V IC=100uA, IE=0 V IC=1mA, IB=0 V IE=100uA, IC=0 1.0 uA VCB=40V, IE=0 1.0 uA VEB=4V, IC=0 500 mV IC=2A, IB=0.2A 390 VCE=2V, IC=100mA MHz VCE=10V, IE=-100mA, f=10MHz pF VCB=10V, IE=0mA, f=1MHz ns VCC 25V, IC=3A, IB1=300mA, IB2=-300mA Switching characteristics measurement circuit
Classification Of hFE
Rank Range Q 120 ~ 270 R 180 ~ 390
1/2
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