2N4033 PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4033 type i...
2N4033
PNP SILICON
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4033 type is a
PNP silicon
transistor manufactured by the epitaxial planar process, designed for high current general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance
Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC PD PD TJ, Tstg ΘJA ΘJC
80 80 5.0 1.0 1.25 7.0 -65 to +200 140 20
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=60V
ICBO
VCB=60V, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10μA
80
BVCEO
IC=10mA
80
BVEBO
IE=10μA
5.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
VBE(ON) VCE=0.5V, IC=500mA
hFE VCE=5.0V, IC=0.1mA
75
hFE VCE=5.0V, IC=100mA
100
hFE VCE=5.0V, IC=500mA
70
hFE VCE=5.0V, IC=1.0A
25
fT VCE=10V, IC=50mA
100
Cob VCB=10V, IE=0, f=1.0MHz
Cib VEB=0.5V, IC=0, f=1.0MHz
ton IC=500mA, IB1=50mA
ts IC=500mA, IB1=IB2=50mA
tf IC=500mA, IB1=IB2=50mA
MAX 50 50 10
0.15 0.50 0.90 1.10
300
400 20 110 100 350 50
UNITS V V V A W W °C
°C/W °C/W
UNITS nA μA μA V V V V V V V
MHz pF pF ns ns ns R1 (15-March 2012)
2N4033
PNP SILICON
TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Emitter 2) Base 3) Colle...