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2N4036 Dataheets PDF



Part Number 2N4036
Manufacturers Motorola Inc
Logo Motorola  Inc
Description General Purpose Transistors
Datasheet 2N4036 Datasheet2N4036 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4036/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N4036 2N4037 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Base Current Collector Current — Continuous Continuous Power Dissipation at or Below TC = 25°C Linear Derating Factor Continuous Power Dissipation at or Below TA = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Le.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4036/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N4036 2N4037 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Base Current Collector Current — Continuous Continuous Power Dissipation at or Below TC = 25°C Linear Derating Factor Continuous Power Dissipation at or Below TA = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature 1/16″ from Case for 10 Seconds Symbol VCEO VCBO VEBO IB IC PD 5.0 28.6 PD 1.0 5.72 TJ, Tstg TL 1.0 5.72 Watts mW/°C °C °C 5.0 28.6 Watts mW/°C 2N4036 – 65 – 90 – 7.0 – 0.5 – 1.0 2N4037 – 40 – 60 – 7.0 Unit Vdc Vdc Vdc Adc Adc 3 2 1 CASE 79–04, STYLE 1 TO–39 (TO–205AD) – 65 to +200 230 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RqJC 2N4036 35 2N4037 35 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Sustaining Voltage(1) (IC = – 100 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = – 0.1 mAdc) Collector Cutoff Current (VCE = – 85 Vdc, VEB = – 1.5 Vdc) (VCE = – 30 Vdc, VEB = – 1.5 Vdc, TC = 150°C) Collector Cutoff Current (VCB = – 90 Vdc, IE = 0) (VCB = – 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = – 7.0 Vdc, IC = 0) (VEB = – 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width VCEO(sus) 2N4036 2N4037 V(BR)CBO 2N4037 ICEX 2N4036 2N4037 ICBO 2N4036 2N4037 IEBO 2N4036 2N4037 — — – 10 – 1.0 — — – 1.0 – 0.25 µAdc — — – 0.1 – 100 µAdc mAdc – 65 – 40 – 60 — — — Vdc Vdc v 300 ms, Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 2N4036 2N4037 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = – 0.1 mAdc, VCE = –10 Vdc) (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc)(1) (IC = –150 mAdc, VCE = – 2.0 Vdc)(1) (IC = – 500 mAdc, VCE = –10 Vdc)(1) Collector – Emitter Saturation Voltage(1) (IC = – 150 mAdc, IB = – 15 mAdc) Base – Emitter Saturation Voltage(1) (IC = – 150 mAdc, IB = – 15 mAdc) Base – Emitter On Voltage(1) (IC = – 150 mAdc, VCE = – 10 Vdc) hFE 2N4036 2N4037 2N4036 2N4037 2N4036 2N4036 2N4036 2N4037 2N4036 VBE(on) 2N4037 — – 1.5 Vdc VCE(sat) VBE(sat) 20 15 40 50 20 20 — — — — — 140 250 200 — – 0.65 – 1.4 –1.4 Vdc Vdc — SMALL– SIGNAL CHARACTERISTICS Collector–Base Capacitance (VCB = – 10 Vdc, f = 1.0 MHz) Current Gain — High Frequency (IC = – 50 mAdc, VCE = – 10 Vdc, f = 20 MHz) Ccb 2N4037 2N4036 2N4037 |hfe| 3.0 3.0 — 10 — — 30 pF SWITCHING CHARACTERISTICS Rise Time (IB1 = – 15 mAdc) Storage Time (IB2 = – 15 mAdc) Fall Time (IB2 = – 15 mAdc) Turn–On Time (IB1 = IB2) Turn–Off Time (IB1 = IB2) 1. Pulse Test: Pulse Width tr 2N4036 ts 2N4036 tf 2N4036 ton 2N4036 toff — 700 ns 2N4036 — 110 ns — 100 ns — 600 ns — 70 ns v 300 ms, Duty Cycle v 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N4036 2N4037 PT, MAXIMUM TRANSISTOR DISSIPATION (W) 10 hFE , NORMALIZED DC CURRENT GAIN 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 – 75 (AT TC) (AT TA) VCE = – 10 V 1.0 AMBIENT TEMPERATURE (TA) = 25°C 0.1 – 0.1 – 1.0 – 10 IC, COLLECTOR CURRENT (mA) – 100 – 25 0 50 100 150 200 CASE OR AMBIENT TEMPERATURE (TC OR TA) – °C Figure 1. Current Gain Characteristics versus Collector–Emitter Voltage Figure 2. Dissipation Derating Curve I CBO , COLLECTOR CUTOFF CURRENT (mA) –10– 6 –10– 7 –10– 8 –10– 9 –10–10 IC, COLLECTOR CURRENT (mA) –10– 5 COLLECTOR–TO–BASE VOLTAGE – 40 V – 20 V COLLECTOR CURRENT (IC) = 10 BASE CURRENT (IB) – 600 AMBIENT TEMPERATURE (TA) = 25°C – 400 – 200 0 25 50 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE (°C) 0 – 0.5 – 0.15 – 0.25 – 0.35 VCE(sat), COLLECTOR–TO–EMITTER SATURATION VOLTAGE (V) Figure 3. Typical Collector–Cutoff Current versus Junction Temperature Figure 4. Typical Saturation–Voltage Characteristics hFE, SMALL–SIGNAL FORWARD CURRENT TRANSFER RATIO 10 8.0 6.0 4.0 2.0 0 IC, COLLECTOR CURRENT (A) COLLECTOR–TO–EMITTER VOLTAGE (VCE) = –10 V FREQUENCY = 20 MHz AMBIENT TEMPERATURE (TA) = 25°C 1.0 IC MAX. (CONTINUOUS) – 0.1 50 µs 100 µs 300 µs 500 µs 1.0 ms DC OPERATION PULSED OPERATION* 9.3 7.0 5.0 3.0 2.0 1.0 NORMALIZED POWER MULTIPLIER CASE TEMPERATURE (TC) = 25°C (CURVES MUST BE DERATED LINEARLY WITH INCREASE OF TEMPERATURE) VCEO MAX = 40 V (2N4037) – 0.01 – 1.0 VCEO MAX = – 65 V (2N4036) *FOR SINGLE NONREPETITIVE PULSE – 1.0 – 10 – 100 – 1000 IC, COLLECTOR CURRENT (mA) – 100 – 10 VCE, COLLECTOR–TO–EMITTER VOLTAGE (V) Figure 5. Typical Small–Signal Beta Characteristics Figure 6. Maximum Safe Operating Areas (SOA) Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 2N4036 2N4037 PACKAGE DIMENSIONS R –A– B C SEATING PLANE –T– E F P D 3 PL 0.36 (0.014) L K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 19.


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