Power MOSFET
PD - 96266
IRF7799L2TRPbF IRF7799L2TR1PbF
RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l I...
Description
PD - 96266
IRF7799L2TRPbF IRF7799L2TR1PbF
RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Industrial Qualified
l
Typical values (unless otherwise specified)
DirectFET Power MOSFET VDSS Qg
tot
VGS Qgd
39nC
RDS(on)
32mΩ@ 10V
250V min ± 30V max 110nC
Vgs(th)
4.0V
S S
S S S S
D
G
S S
D
Applicable DirectFET Outline and Substrate Outline SB SC M2 M4
L8
DirectFET ISOMETRIC
L4
L6
L8
Description
The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7799L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high ...
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