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IRLH5034PBF Dataheets PDF



Part Number IRLH5034PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRLH5034PBF DatasheetIRLH5034PBF Datasheet (PDF)

PD - 97489 IRLH5034PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 4.5V) 40 3.2 43 1.2 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increas.

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PD - 97489 IRLH5034PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 4.5V) 40 3.2 43 1.2 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Note Features and Benefits Features Low RDSon (≤3.2mΩ @ Vgs = 4.5V ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRLH5034TRPBF IRLH5034TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 1000 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 40 ±16 29 23 100 100 400 3.6 250 0.029 -55 to + 150 Units V g g c h h A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes  through † are on page 8 www.irf.com 1 Free Datasheet http://www.datasheet4u.com/ 04/12/10 IRLH5034PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. 40 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– 130 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.04 2.0 2.7 ––– -6.4 ––– ––– ––– ––– ––– 82 43 8.1 5.0 24 5.9 29 31 1.2 21 54 31 21 4730 860 460 Conditions Max. Units ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 2.4 VGS = 10V, ID = 50A mΩ VGS = 4.5V, ID = 50A 3.2 2.5 V VDS = VGS, ID = 150µA ––– mV/°C VDS = 40V, VGS = 0V 20 µA VDS = 40V, VGS = 0V, TJ = 125°C 250 VGS = 16V 100 nA -100 VGS = -16V ––– S VDS = 10V, ID = 50A ––– nC VGS = 10V, VDS = 20V, ID = 50A 65 ––– VDS = 20V ––– VGS = 4.5V nC ID = 50A ––– ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V e e ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– Ω ns VDD = 20V, VGS = 4.5V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 25V ƒ = 1.0MHz Max. 360 50 Conditions MOSFET symbol showing the integral reverse G S pF Avalanche Characteristics EAS IAR Diode Characteristics IS ISM VSD trr Qrr ton ™ d Min. ––– ––– Typ. ––– ––– Units mJ A Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Max. Units 100 A 400 D Ù ––– ––– 1.3 V ––– 25 38 ns ––– 74 110 nC Time is dominated by parasitic Inductance p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 20V di/dt = 400A/µs e eà Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient f f Parameter g g Typ. ––– ––– ––– ––– Max. 0.5 15 35 22 Units °C/W 2 www.irf.com Free Datasheet http://www.datasheet4u.com/ IRLH5034PbF 1000 TOP VGS 15V 10V 4.5V 4.0V 3.3V 3.1V 2.9V 2.7V 1000 TOP VGS 15V 10V 4.5V 4.0V 3.3V 3.1V 2.9V 2.7V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) BOTTOM 100 10 2.7V 2.7V ≤60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 10 0.1 1 ≤60µs PULSE WIDTH Tj = 150°C 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 2.0 ID = 50A VGS = 10V ID, Drain-to-Source Current (A) 100 T J = 150°C 10 1.5 T J = 25°C 1.0 1 VDS = 25V ≤60µs PULSE WIDTH 1 2 3 4 5 0.1 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 3.


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