Power MOSFET
PD - 97582B
IRLHS6242PbF
HEXFET® Power MOSFET
VDS VGS RDS(on) max
(@VGS = 4.5V)
20 ±12 11.7 15.5 12
V V mΩ mΩ A
'
...
Description
PD - 97582B
IRLHS6242PbF
HEXFET® Power MOSFET
VDS VGS RDS(on) max
(@VGS = 4.5V)
20 ±12 11.7 15.5 12
V V mΩ mΩ A
'
X @ D W Ã Q P U
D D
'
D
RDS(on) max
(@VGS = 2.5V)
G
'
'
'
ID
(@TC (Bottom) = 25°C)
d
D
D
S
S
6
6
*
2mm x 2mm PQFN
Applications
Charge and discharge switch for battery application System/Load Switch
Features and Benefits
Features Low RDSon (≤ 11.7mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier
results in
⇒
Orderable part number IRLHS6242TRPBF IRLHS6242TR2PBF
Package Type PQFN 2mm x 2mm PQFN 2mm x 2mm
Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400
Note
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 70°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V
Max.
20 ±12 10 8.3 22 18
Units
V
i i
Continuous Drain Current, VGS @ 4.5V (Package Limited) Pulsed Drain Current
g Power Dissipation g
Power Dissi...
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