IRLHS6342PBF

PD - 96339A IRLHS6342PbF VDS VGS RDS(on) max (@VGS = 4.5V) 30 ±12 15.5 11 12 V V mΩ nC A D 1 HEXFET® Power MOSFET TOP VIEW 6 D D D D D Qg (typical) ID (@TC (Bottom) = 25°C) D 2 S D 5 D G i G 3 4 S D S S 2mm x 2mm PQFN Applications Charge and discharge switch for battery application System/Load Switch Features and Benefits Features Low RDSon (≤ 15.5mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Resulting Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRLHS6342TRPBF IRLHS6342TR2PBF Package Type PQFN 2mm x 2mm PQFN 2mm x 2mm Standard Pack Form Quantity Tape and Reel 4000 400 Tape and Reel Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom)= 70°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Wirebond Limited) Pulsed Drain Current Max. 30 ±12 8.7 6.9 19 15 Units V g Power Dissipation g Power Dissipation c hi hi 12i 76 2.1 1.3 A W W/°C °C ...