MMBTA42L

MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Characteristic Symbol Value Unit Collector −Emitter Voltage VCEO Vdc MMBTA42, SMMBTA42 300 MMBTA43 200 Collector −Base Voltage MMBTA42, SMMBTA42 VCBO 300 Vdc MMBTA43 200 Emitter −Base Voltage VEBO Vdc MMBTA42, SMMBTA42 6.0 MMBTA43 6.0 Collector Current − Continuous THERMAL CHARACTERISTICS IC 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. www.onsemi.com 1 BASE COLLECTOR 3 2 EMITTER 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAMS 1D M G G 1 M1E M G G 1 1D = MMBTA42LT, SMMBTA42L M1E = M...