MMBTA42L, SMMBTA42L, MMBTA43L
High Voltage Transistors
NPN Silicon
Features
• S Prefix for Automotive and Other Applica...
MMBTA42L, SMMBTA42L, MMBTA43L
High Voltage
Transistors
NPN Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
Vdc
MMBTA42, SMMBTA42
300
MMBTA43
200
Collector −Base Voltage MMBTA42, SMMBTA42
VCBO
300
Vdc
MMBTA43
200
Emitter −Base Voltage
VEBO
Vdc
MMBTA42, SMMBTA42
6.0
MMBTA43
6.0
Collector Current − Continuous THERMAL CHARACTERISTICS
IC 500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C
PD 225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C Derate above 25°C
RqJA PD
556 °C/W 300 mW 2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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1 BASE
COLLECTOR 3
2 EMITTER
3
1 2
SOT−23 (TO−236) CASE 318 STYLE 6
MARKING DIAGRAMS
1D M G G
1
M1E M G G
1
1D = MMBTA42LT, SMMBTA42L M1E = M...