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MMBZ15VALT1G Dataheets PDF



Part Number MMBZ15VALT1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Zener Diode
Datasheet MMBZ15VALT1G DatasheetMMBZ15VALT1G Datasheet (PDF)

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series Zener Diodes, 24 and 40 Watt Peak Power SOT−23 Dual Common Anode Zeners These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only.

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MMBZxxxALT1G Series, SZMMBZxxxALT1G Series Zener Diodes, 24 and 40 Watt Peak Power SOT−23 Dual Common Anode Zeners These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Features • SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration • Standard Zener Breakdown Voltage Range − 5.6 V to 47 V • Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform • ESD Rating: − Class 3B (> 16 kV) per the Human Body Model − Class C (> 400 V) per the Machine Model • ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge • Maximum Clamping Voltage @ Peak Pulse Current • Low Leakage < 5.0 mA • Flammability Rating UL 94 V−0 • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. www.onsemi.com SOT−23 CASE 318 STYLE 12 CATHODE 1 CATHODE 2 3 ANODE MARKING DIAGRAM XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 1996 1 August, 2016 − Rev. 20 Publication Order Number: MMBZ5V6ALT1/D MMBZxxxALT1G Series, SZMMBZxxxALT1G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1G thru MMBZ9V1ALT1G @ TL ≤ 25°C MMBZ12VALT1G thru MMBZ47VALT1G Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C Ppk °PD° 24 W 40 225 mW° 1.8 mW/°C Thermal Resistance Junction−to−Ambient Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C RqJA °PD° 556 °C/W 300 °mW 2.4 mW/°C Thermal Resistance Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 7. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ORDERING INFORMATION Device Package Shipping† MMBZ5V6ALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZMMBZ5V6ALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZ5V6ALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBZ6VxALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZMMBZ6VxALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZ6VxALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBZ9V1ALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZ9V1ALT13G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBZxxVALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZMMBZxxVALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZxxVALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZMMBZxxVALT3G* SOT−23 (Pb−Free) 10,000 / Tape & Reel SZMMBZxxVTALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 2 MMBZxxxALT1G Series, SZMMBZxxxALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) I Symbol IPP VC VRWM IR VBR IT QVBR IF VF ZZT IZK ZZK Parameter Maximum Reverse Peak Pulse Current Clamping Volt.


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