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NSBA114EDP6 Dataheets PDF



Part Number NSBA114EDP6
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual PNP Bias Resistor Transistors
Datasheet NSBA114EDP6 DatasheetNSBA114EDP6 Datasheet (PDF)

MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrati.

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MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C, common for Q1 and Q2, unless otherwise noted) Rating Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping† MUN5111DW1T1G, SMUN5111DW1T1G* SOT−363 3,000 / Tape & Reel NSVMUN5111DW1T3G* SOT−363 10,000 / Tape & Reel NSBA114EDXV6T1G, NSVBA114EDXV6T1G* SOT−563 4,000 / Tape & Reel NSBA114EDP6T5G SOT−963 8,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 1 June, 2017 − Rev. 3 www.onsemi.com PIN CONNECTIONS (3) (2) (1) R1 Q1 R2 R1 (4) (5) R2 Q2 (6) MARKING DIAGRAMS 6 0A M G G 1 SOT−363 CASE 419B 0A M G 1 SOT−563 CASE 463A F M 1 SOT−963 CASE 527AD 0A/F M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Publication Order Number: DTA114ED/D MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 THERMAL CHARACTERISTICS Characteristic Symbol MUN5111DW1 (SOT−363) One Junction Heated Total Device Dissipation PD TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA MUN5111DW1 (SOT−363) Both Junction Heated (Note 3) Total Device Dissipation PD TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA Thermal Resistance, (Note 1) Junction to Lead (Note 2) RqJL Junction and Storage Temperature Range NSBA114EDXV6 (SOT−563) One Junction Heated TJ, Tstg Total Device Dissipation PD TA = 25°C (Note 1) Derate above 25°C (Note 1) Thermal Resistance, Junction to Ambient (Note 1) RqJA NSBA114EDXV6 (SOT−563) Both Junction Heated (Note 3) Total Device Dissipation PD TA = 25°C (Note 1) Derate above 25°C (Note 1) Thermal Resistance, Junction to Ambient (Note 1) RqJA Junction and Storage Temperature Range NSBA114EDP6 (SOT−963) One Junction Heated TJ, Tstg Total Device Dissipation PD TA = 25°C (Note 4) (Note 5) Derate above 25°C (Note 4) (Note 5) Thermal Resistance, Junction to Ambient (Note 4) (Note 5) RqJA NSBA114EDP6 (SOT−963) Both Junction Heated (Note 3) Total Device Dissipation PD TA = 25°C (Note 4) (Note 5) Derate above 25°C (Note 4) (Note 5) Thermal Resistance, Junction to Ambient (Note 4) (Note 5) RqJA Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 4. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 5. FR−4 @ 500 mm2, 1 oz. copper traces, still air. TJ, Tstg Max Unit 187 mW 256 1.5 mW/°C 2.0 670 °C/W 490 250 385 2.0 3.0 493 325 188 208 −55 to +150 mW mW/°C °C/W °C/W °C 357 mW 2.9 mW/°C °C/W 350 500 4.0 250 −55 to +150 mW mW/°C °C/W °C 231 mW 269 1.9 mW/°C 2.2 540 °C/W 464 339 408 2.7 3.3 369 306 −55 to +150 mW mW/°C °C/W °C www.onsemi.com 2 MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO nAdc − − 100 Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO nAdc − − 500 Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO mAdc − − 0.5 Collector.


NSBA114EDXV6 NSBA114EDP6 NCP4523


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