Document
MUN5111DW1, NSBA114EDXV6, NSBA114EDP6
Dual PNP Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW
PNP Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC
100
mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5111DW1T1G, SMUN5111DW1T1G*
SOT−363
3,000 / Tape & Reel
NSVMUN5111DW1T3G*
SOT−363
10,000 / Tape & Reel
NSBA114EDXV6T1G, NSVBA114EDXV6T1G*
SOT−563
4,000 / Tape & Reel
NSBA114EDP6T5G
SOT−963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
June, 2017 − Rev. 3
www.onsemi.com
PIN CONNECTIONS
(3)
(2)
(1)
R1 Q1
R2
R1
(4)
(5)
R2 Q2 (6)
MARKING DIAGRAMS
6
0A M G G
1
SOT−363 CASE 419B
0A M G 1
SOT−563 CASE 463A
F
M 1
SOT−963 CASE 527AD
0A/F M G
= Specific Device Code = Date Code* = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
Publication Order Number: DTA114ED/D
MUN5111DW1, NSBA114EDXV6, NSBA114EDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5111DW1 (SOT−363) One Junction Heated
Total Device Dissipation
PD
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
MUN5111DW1 (SOT−363) Both Junction Heated (Note 3)
Total Device Dissipation
PD
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
RqJL
Junction and Storage Temperature Range NSBA114EDXV6 (SOT−563) One Junction Heated
TJ, Tstg
Total Device Dissipation
PD
TA = 25°C
(Note 1)
Derate above 25°C
(Note 1)
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA
NSBA114EDXV6 (SOT−563) Both Junction Heated (Note 3)
Total Device Dissipation
PD
TA = 25°C
(Note 1)
Derate above 25°C
(Note 1)
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range NSBA114EDP6 (SOT−963) One Junction Heated
TJ, Tstg
Total Device Dissipation
PD
TA = 25°C
(Note 4)
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
Thermal Resistance, Junction to Ambient
(Note 4) (Note 5)
RqJA
NSBA114EDP6 (SOT−963) Both Junction Heated (Note 3)
Total Device Dissipation
PD
TA = 25°C
(Note 4)
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
Thermal Resistance, Junction to Ambient
(Note 4) (Note 5)
RqJA
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 4. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
TJ, Tstg
Max
Unit
187
mW
256
1.5
mW/°C
2.0
670
°C/W
490
250 385 2.0 3.0
493 325
188 208
−55 to +150
mW mW/°C °C/W °C/W
°C
357
mW
2.9
mW/°C
°C/W 350
500 4.0
250 −55 to +150
mW mW/°C °C/W
°C
231
mW
269
1.9
mW/°C
2.2
540
°C/W
464
339 408 2.7 3.3
369 306
−55 to +150
mW mW/°C °C/W
°C
www.onsemi.com 2
MUN5111DW1, NSBA114EDXV6, NSBA114EDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
nAdc
−
−
100
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
nAdc
−
−
500
Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0)
IEBO
mAdc
−
−
0.5
Collector.