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NOIS1SM1000S

ON Semiconductor

1M Pixel Radiation Hard CMOS Image Sensor

NOIS1SM1000S, NOIS1SM1000A STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Features • • • • • • • • • • • • • • • • ...


ON Semiconductor

NOIS1SM1000S

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Description
NOIS1SM1000S, NOIS1SM1000A STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Features 1024 x 1024 Active Pixels 15 mm x 15 mm Pixel Size 1 inch − 35 mm Optical Format High Radiation Tolerance High Sensitivity Low Noise Monochrome and Color 11 Frames per Second (fps) at Full Resolution On-chip 10-bit Analog-to-Digital Converter (ADC) Region of Interest (ROI) Readout Windowed and Subsampled Readout Rolling Shutter On-chip Fixed Pattern Noise (FPN) Correction Ceramic JLCC-84 Package BK7G18 Glass with N2 Filled Cavity 400 mW Power Dissipation These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications Standard market Applications Nuclear Inspection Space Applications Figure 1. STAR1000 in 84−Pin Ceramic JLCC Package JLDCC84 CASE 114AK Space Science Star Trackers Sun Sensors Description The STAR1000 is a CMOS image sensor with 1024 by 1024 pixels on a 15 mm x 15 mm pitch. It features on-chip Fixed Pattern Noise (FPN) correction, a programmable gain amplifier, and a 10-bit Analog-to-Digital Converter (ADC). All circuits are designed using the radiation tolerant design techniques to allow high tolerance against Radiation effects. Registers which contain the X- and Y- addresses of the read out pixels can be directly accessed by the external controller. This architecture provides for flexible operation and allows different operation modes such as (multiple) windowing, subsampling, and so on. The STAR1000 is assembl...




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