2N4123, 2N4124
General Purpose Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Ra...
2N4123, 2N4124
General Purpose
Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage
Symbol Value
Unit
VCEO
Vdc
2N4123
30
2N4124
25
Collector−Base Voltage
VCBO
Vdc
2N4123
40
2N4124
30
Emitter−Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC PD
5.0
Vdc
200
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR 3
2 BASE
1 EMITTER
TO−92 CASE 29 STYLE 1
123 STRAIGHT LEAD
BULK PACK
1 2 3
BENT LEAD TAPE & REEL AMMO PACK
MARKING DIAGRAM
2N
412x AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
November, 2008 − Rev. 4
x = 3 or 4 A = Assembly Location...