NTMFS5832NL

NTMFS5832NL MOSFET – Power 40 V, 111 A, 4.2 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 40 V VGS ±20 V TA = 25°C ID 20 A TA = 70°C 16 Power Dissipation TA = 25°C PD RqJA (Note 1) Steady TA = 70°C Continuous Drain State TC = 25°C ID Current RqJC (Note 1) TC = 70°C 3.1 W 1.9 111 A 89 Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C PD TC = 70°C tp = 10 ms IDM 96 W 61 443 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C +150 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (L = 0.1 mH) IS EAS IAS 111 A 134 mJ 52 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) (Note 1) Junction−to−Ambient Steady State (Note 1) RqJC RqJA 1....