NVMFS5844NL

NTMFS5844NL, NVMFS5844NL MOSFET – Power, Single, N-Channel 60 V, 61 A, 12 mW Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5844NLWF − Wettable Flanks Product NVMFS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- Tmb = 25°C ID rent RYJ−mb (Notes 1, 2, 3, 4) Steady Tmb = 100°C Power Dissipation State Tmb = 25°C PD RYJ−mb (Notes 1, 2, 3) Tmb = 100°C 61 A 43 107 W 54 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1, 3, 4) Steady TA = 100°C Power Dissipation RqJA (Notes 1 & 3) State TA = 25°C PD TA = 100°C 11.2 A 8.0 3.7 W 1.8 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 247 A Current Limited by Package (Note 4) TA = 25°C IDmaxPkg 80 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C 175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 31 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 60 A EAS 48 mJ TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximu...