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NTSV2080CT Dataheets PDF



Part Number NTSV2080CT
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Very Low Forward Voltage Trench-based Schottky Rectifier
Datasheet NTSV2080CT DatasheetNTSV2080CT Datasheet (PDF)

NTSV2080CT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.50 V at IF = 5 A Features http://onsemi.com PIN CONNECTIONS 1 2, 4 3 4 • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These Devices are Pb−Free,.

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NTSV2080CT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.50 V at IF = 5 A Features http://onsemi.com PIN CONNECTIONS 1 2, 4 3 4 • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 1 2 TO−220AB CASE 221A STYLE 6 3 MARKING DIAGRAMS Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal • AY WW TSV2080CG AKA Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec A Y WW AKA G = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Package/Halide Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. 0 1 Publication Order Number: NTSV2080CT/D Free Datasheet http://www.datasheet4u.com/ NTSV2080CT MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 130°C) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 125°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature Storage Temperature Voltage Rate of Change (Rated VR) Per device Per diode Per device Per diode Symbol VRRM VRWM VR IF(AV) Value 80 Unit V 20 10 40 20 100 −40 to +150 −40 to +150 10,000 A IFRM A IFSM TJ Tstg dv/dt A °C °C V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient Symbol RqJC RqJA Value 2.0 70 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% IR Symbol vF Typ 0.55 0.65 0.50 0.58 20 10 Max − 0.98 − 0.82 600 20 mA mA Unit V ORDERING INFORMATION Device NTSV2080CTG Package TO−220AB (Pb−Free/Halide Free) Shipping 50 Units / Rail http://onsemi.com 2 Free Datasheet http://www.datasheet4u.com/ NTSV2080CT TYPICAL CHARACTERISITICS i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 100 TA = 150°C I R , REVERSE CURRENT (mA) TA = 25°C 10 TA = 125°C 100 TA = 150°C 10 TA = 125°C 1.0 0.1 1.0 0.01 TA = 25°C 0.1 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 20 30 50 70 40 60 VR, REVERSE VOLTAGE (VOLTS) 80 Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current 10000 CJ, JUNCTION CAPACITANCE (pF) TJ = 25°C IF(AV), AVERAGE FORWARD CURRENT (A) 20 RqJC = 1.3°C/W dc 15 1000 10 SQUARE WAVE 100 5 10 0.1 0 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 Figure 3. Typical Junction Capacitance Figure 4. Current Derating per Leg IF(AV), AVERAGE FORWARD CURRENT (A) 40 dc PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 SQUARE WAVE RqJC = 1.3°C/W 20 18 16 14 12 10 8 6 4 2 0 0 4 IPK/IAV = 10 IPK/IAV = 5 IPK/IAV = 20 SQUARE WAVE dc TA = 150°C 8 12 16 20 24 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 Free Datasheet http://www.datasheet4u.com/ NTSV2080CT TYPICAL CHARACTERISITICS 10 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 1 50% Duty Cycle 20% 10% 0.1 5% 2% 1% 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 100 1000 Single Pulse 0.01 0.000001 0.00001 Figure 7. Typical Transient Thermal Response, Junction−to−Case http://onsemi.com 4 Free Datasheet http://www.datasheet4u.com/ NTSV2080CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G.


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